 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Composite Transistors XP1E554 Silicon NPN epitaxial planer transistor Unit: mm 2.10.1 0.425 1.250.1 0.425 0.65 q q q 0.9 0.1 0 to 0.1 s Basic Part Number of Element q 0.70.1 0.12 - 0.02 0.20.1 2SC3757 x 2 elements 1 : Base (Tr1) 2 : Emitter (Tr1) Collector (Tr2) s Absolute Maximum Ratings Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 40 40 5 100 300 150 150 -55 to +150 Unit V V V mA mA mW C C 3 : Base (Tr2) 4 : Emitter (Tr2) 5 : Collector (Tr1) EIAJ : SC-88A S-Mini Type Package (5-pin) Marking Symbol: 5S Internal Connection 1 2 3 4 Tr1 6 Peak collector current Total power dissipation Overall Junction temperature Storage temperature Tr2 s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time (Ta=25C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 15V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 60 0.17 min typ max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit A A +0.05 Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 collecter.) Reduction of the mounting area and assembly cost by one half. Low VCE(sat). 2.00.1 s Features 0.65 1 2 3 5 4 0.2 0.20.05 For high speed switching 1 Composite Transistors ton, toff Test Circuit 0.1F Vout 220 Vin=10V 3.3k 3.3k Vbb= -3V 50 Vin=10V 500 50 Vbb=2V VCC=10V XP1E554 tstg Test Circuit 0.1F A 910 0.1F 500 90 Vout PT -- Ta 200 1k Total power dissipation PT (mW) 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 50 VCC=3V Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Wave form at A) Vout ton toff Ambient temperature Ta (C) IC -- VCE 120 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 VBE(sat) -- IC 100 IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) 100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C -25C 30 10 3 1 0.3 0.1 0.03 0.01 Ta=-25C 25C 75C Collector current IC (mA) IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE -- IC 600 VCE=1V 600 fT -- IE 6 Cob -- VCB Collector output capacitance Cob (pF) VCB=10V Ta=25C f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 500 Transition frequency fT (MHz) 500 5 400 400 4 300 300 3 200 Ta=75C 25C -25C 200 2 100 100 1 0 0.1 0.3 1 3 10 30 100 0 -1 -3 -10 -30 -100 -300 -1000 0 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 2 |
Price & Availability of XP1E554
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |